The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 1999
Filed:
May. 10, 1995
Kenji Harafuji, Osaka, JP;
Masafumi Kubota, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A reactive gas is introduced into a vacuum chamber by a gas controller so that a plasma is generated in a plasma generation region. Subsequently, high-frequency power from a high-frequency power source is applied to a sample stage in the vacuum chamber so that ions in the plasma are made incident upon the sample stage, thereby performing dry etching with respect to a sample on the sample stage. In main etching, a value of (pressure of reactive gas)/(frequency of high-frequency power) is reduced so as to reduce a scattering probability, which is the probability of ions being scattered in collision with neutral particles in a sheath region, thereby increasing the energy of ion fluxes and making the incidence directions of the ion fluxes perpendicular to a surface of the sample stage. In overetching, the value of (pressure of reactive gas)/(frequency of high-frequency power) is increased so as to increase the above scattering probability, thereby reducing the energy of the ion fluxes and tilting the incidence directions of the ion fluxes from a perpendicular to the surface of the sample stage.