The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 1999
Filed:
Dec. 10, 1996
Tadayuki Kimura, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A method of fabricating a semiconductor device, which is capable of effectively forming high reliability contacts in a plurality of regions to be contacted which are formed at different depths. The method includes the steps of: forming an etching stopper layer on an insulating layer covering a plurality of the regions to be contacted and having a stepped shape; selectively forming, in a lower height area of the insulating layer having the stepped shape, a conductive plug layer connected to a deeper region to be contacted which is formed under the lower height area of the insulating layer; forming a planarization layer on the lower height area of the insulating layer, followed by planarization over the entire surface; and selectively forming contact holes reaching the plug layer and other shallower regions to be contacted, simultaneously.