The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 1999
Filed:
Jan. 13, 1998
Applicant:
Inventors:
Assignee:
Cornell Research Foundation, Inc., Ithaca, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117952 ;
Abstract
A low temperature method for preparing GaN single crystals for use, for example, for blue light emitting diodes and laser diodes, comprises using sodium as a flux in a reaction system containing only gallium, sodium and nitrogen, e.g., by thermally decomposing sodium azide in a closed reaction zone containing gallium or by reacting gallium with nitrogen supplied from a tank in a closed reaction zone containing sodium, optionally in the presence of a catalytic amount of an alkaline earth metal.
DiSalvo, Francis. (1999). Low temperature method of preparing gan single crystals (U.S. Patent No. 5868837). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5868837
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