Static random access memory with improved write recovery procedure

Abstract

A method and apparatus for reading and writing data into a random access memory array having a dummy bit. The method includes the steps of providing a clock signal having two edges, one going from low to high and the other going from high to low. The edge going to high from low triggers an enable signal. The enable signal substantially simultaneously triggers a main wordline signal and a dummy wordline signal, the main wordline signal initiating a memory access process while the dummy wordline signal causes the generation of a dummy bit signal from the dummy bit, the combination of the main wordline signal and the dummy bit signal permitting memory access. The dummy bit signal shuts off the enable signal, which in turn causes the memory access process to be terminated and the memory array to go into a bit line precharging stage in preparation for a next read or write cycle, whereby bit line precharging may be commenced prior to the end of the clock cycle.