The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 1999
Filed:
Sep. 29, 1997
Robert E Goozner, Charlotte, NC (US);
Other;
Abstract
A method for removing VOCs from a gas stream comprising irradiating the gas stream in intimate contact with a semiconductor catalyst under laminar flow conditions. The catalyst can be chosen from a wide range of semiconductor materials, including naturally occurring chalcopyrites, synthetic chalcopyrites, CdTe, CdS, CuInSe.sub.2, CuS, FeS.sub.2, CuFeS.sub.2, Si, GaAs, GaSb, GaPS, ZnS, GaInP, and As.sub.2 S.sub.3. This process can be performed in a fluidized bed, in a tube reactor or in an irradiated reactor packed with catalyst adhering to a light conducting fibrous substrate. The method is capable of being practiced in a passive manner in a module have no moving parts and no requirement for routine maintenance or replenishment of reagents.