The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 1999

Filed:

Dec. 26, 1996
Applicant:
Inventors:

Tatsuro Beppu, Tokyo, JP;

Shuji Hayase, Yokohama, JP;

Atsushi Kamata, Fujisawa, JP;

Kenji Sano, Tokyo, JP;

Toshiro Hiraoka, Yokohama, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438502 ; 438 63 ; 438 82 ; 438488 ; 136258 ; 136261 ;
Abstract

A silicon thin film is formed by coating on a substrate a solution of polysilane represented by the general formula --(SiR.sup.1.sub.2).sub.n --, where R.sup.1 substituents are selected from the group consisting of hydrogen, an alkyl group having two or more carbon atoms and a .beta.-hydrogen, a phenyl group and a silyl group, and thermally decomposing the polysilane to deposit silicon.


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