The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 1999
Filed:
Feb. 20, 1997
Abdalla Aly Naem, Sunnyvale, CA (US);
Mohsen Shenasa, Pleasanton, CA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
A MOS transistor structure is provided in which the source/drain contacts are to raised polysilicon and are located entirely over field isolation. Contact integrity is maintained because the contact is located on field oxide, rather than in direct contact with the substrate junction diffusion area. Conventional contact metal spiking into the junction area is also eliminated. Contact overetch during formation of the contact opening can be increased to insure a clean contact surface because the contact is made to the raised poly regions. Furthermore, the contact barrier is no longer essential for maintaining contact reliability, because the contact is located away from the active junction.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile