The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 1999
Filed:
Aug. 29, 1995
Chang Jae Lee, Cheongju-si, KR;
LG Semicon Co., Ltd., Chungcheongbuk-Do, KR;
Abstract
A CMOS fabrication method includes the steps of providing a substrate having a surface, forming a first conductive well adjacent to the surface of the substrate, forming a second conductive well adjacent to the surface of the substrate, a portion of the first conductive well overlapping a portion of the second conductive well, forming a field oxide in the overlapping portion of the first and second conductive wells forming a first gate over the first conductive well and a second gate over the second conductive well, masking the first conductive well and implanting second conductive impurities on the second conductive well and masking the second conductive well and implanting first conductive impurities on the first conductive well.