The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 1999
Filed:
Jul. 22, 1996
Applicant:
Inventors:
Assignee:
Korea Institute of Science and Technology, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 85 ; 117104 ; 117913 ; 117923 ; 117937 ; 117940 ; 117954 ; 117 92 ;
Abstract
A semiconductor device epitaxial layer lateral growth rate control method using CBr.sub.4 gas involves regulating an epitaxial layer lateral growth rate in accordance with the CBr.sub.4 amount doped into the epitaxial layer during the epitaxial layer growth occurring on a patterned GaAs substrate by means of a metalorganic chemical vapor deposition (MOCVD) process. The lateral growth rate may be regulated by varying the growth temperature and the V/III doping ratio.