The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 1999
Filed:
Feb. 07, 1997
Nanlei Larry Wang, Palo Alto, CA (US);
Ronald Patrick Green, Santa Clara, CA (US);
EIC Enterprises Corp., Tortola, VG;
Abstract
A low voltage regulator integrated circuit for high speed/high frequency circuits incorporates a field effect transistor switch with a heterojunction bipolar transistor in order to reduce voltage requirements of the circuit and allow lower power voltages to be regulated. A first field effect transistor connects an unregulated power input terminal to a regulated power output terminal with a bias circuit including the heterojunction bipolar transistor provided to maintain conductance of the field effect transistor in regulating a voltage on the output terminal. A second field effect transistor can be included in the circuit to provide a power down or power saving mode of operation. An input voltage range of the voltage regulator is reduced from 3-3.5 V to 2-2.3 V using the integrated field effect transistor/heterojunction bipolar transistor device structure.