The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 1999
Filed:
Jun. 24, 1997
Kazuo Konuma, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A field emission device is configured so as to suppress any deviation of the central axis of the distribution of emitted electrons from a conical cathode, with no electrode in addition to the gate electrode. A conductive layer is disposed over an insulating layer and has an electron emission window disposed over the conical cathode. Plural curved slits are formed in the conductive layer so as to expose the insulating layer and are arranged along a circle which is concentric with the tip of the conical cathode. The gate electrode is formed by the portion of conductive layer between the electron emission window and the curved slits. The portion of the conductive layer outside of the curved slits serves to distribute an applied potential to the gate electrodes of plural field emission devices arranged in a matrix. The portions of the conductive layer disposed between the curved slits serve to connect the gate electrode to the outer portion of the conductive layer. By selection of the physical geometry of the gate electrode, the field emission window, and the curved slits, and/or by selection of the relative doping concentrations of the gate electrode and the portions of the conductive layer disposed between the curved slits, any deviation in the emission direction of the electrons is automatically compensated for by a deviation in the voltage dropped by a portion of the gate electrode into which a disproportionate amount of electrons have been emitted.