The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 1999
Filed:
Apr. 25, 1995
Applicant:
Inventors:
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430313 ; 430394 ; 430323 ; 438706 ; 438724 ; 216 51 ; 216 62 ; 216 74 ;
Abstract
A processing method is described which has a first step of depositing on a substrate a specimen film which may be any one of a semiconductor, a metal and a insulator. In a second step, the surface of the specimen film deposited in the first step, is irradiated with an ion beam to produce a physical damage on the surface, next, in a third step, the damaged specimen film surface is selectively irradiated with the light to partially cause a photochemical reaction so that a mask pattern, which depends on the desired device structure, is formed on the film surface. Finally, in a fourth step, photoetching is performed using the mask pattern formed in the third step as a shielding member.