The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 1999
Filed:
Jul. 11, 1996
Applicant:
Inventors:
Assignee:
Kabushiki Kaisha Kobe Seiko Sho, Kobe, JP;
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 89 ; 117 95 ; 117929 ;
Abstract
Provided is a process for economically producing single crystal diamond film with a large surface area by gas-phase synthesis. The process comprises depositing platinum film or platinum alloy film containing more than 50 atomic % of platinum on a basal substrate with (111) or (001) surface while keeping the substrate temperature at 300.degree. C. or above, annealing the platinum or platinum alloy film at 1000.degree. C. or above, and performing the gas-phase synthesis of diamond using said platinum or platinum alloy film as the substrate.