The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 1999
Filed:
Jun. 07, 1996
Chikashi Anayama, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A semiconductor laser having a stepped substrate of group III-V compound semiconductor exposing upper and lower flat planes and a slant plane coupling the upper and lower flat planes, a lower clad layer formed directly on the stepped substrate, an active layer formed directly on the lower clad layer, and an upper clad layer formed directly on the active layer and including a current blocking layer at partial first depth regions. Denoting an angle between a boundary plane, between a region in the upper clad layer along the upper flat plane and a region in the upper clad layer along the slant plane, and the slant plane of the active layer, or an angle between a first virtual plane and the slant plane of the active layer, the first virtual plane being made by extending a boundary plane, between a region in the lower clad layer along the upper flat plane and a region in the lower clad layer along the slant plane, into the upper clad layer, .theta., the angle .theta. at the partial first depth region, on the active layer side, for one of the upper and lower clad layers is different from the angle .theta. for the one clad layer at a second depth region more remote from the active layer than the first depth region.