The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 1999
Filed:
Dec. 05, 1996
Applicant:
Inventor:
Kwang-Hoon Oh, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257133 ; 257341 ;
Abstract
An insulated gate bipolar transistor according to the present invention has a first and a second emitter regions. A diffusion region of the first conductive type is formed in the first emitter region of the second conductive type. The second emitter region has a region having a high concentration compared with the remaining portion of the second emitter region. The high concentration region is adjacent to the diffusion region and positioned towards the center of a first conductive type well. In addition, the junction depth of the high concentration region is similar to the diffusion region.