The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 1999
Filed:
Jul. 15, 1996
Cheng P Wen, Mission Viego, CA (US);
Wah S Wong, Montebello, CA (US);
Arlene E Arthur, Torrance, CA (US);
Raytheon Company, El Segundo, CA (US);
Abstract
A thin film (at least one atomic layer to about 400 .ANG.) of nickel is electrolytically plated on top of electrolytically-plated gold electrodes in GaAs monolithic microwave integrated circuits (MMICs) without any additional photoresist masking step. The thin electrolytically-plated nickel film improves adhesion of a passivating dielectric layer (e.g., silicon dioxide, silicon nitride, and silicon oxynitride) formed on the electrolytically-plated gold electrodes. The electrolytically-plated nickel film can be removed locally to facilitate the fabrication of plated silver bumps (for off-chip electrical connections and thermal paths) on passivated flip chip MMICs.