The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 1999
Filed:
Jan. 21, 1997
Chung-You Hu, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
The present invention is a semiconductor device and a method of providing such a semiconductor device which allows a high junction breakdown voltage and a high field turn on voltage, while allowing the field oxide thickness to be limited and being independent of a misalignment of the mask. A method in accordance with the present invention for providing a semiconductor device including a field oxide, the field oxide including a field oxide boundary wherein the field oxide is located within the boundary, the method comprising the step of implanting a first implant area into the substrate, including areas proximate indistance to a junction area, the first area being implanted with a first implant concentration and implanting a second implant area distal to the junction area, the second implant area being implanted with a second implant concentration, wherein the depth of the implant is controlled by the energy level, wherein the implant of the second implant area is independent of a misalignment of a mask.