The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 1999
Filed:
Jun. 26, 1997
Yong Sik Yu, Kyoungki-do, KR;
Kwon Hong, Kyoungki-do, KR;
Hyundai Electronics Industries Co., Ltd., Ichon-shi, KR;
Abstract
A method for fabricating a capacitor of a semiconductor device, which is capable improving the chemical and thermal stability of lower electrodes. The method includes forming an interlayer insulating film provided with a contact hole over a semiconductor substrate, forming a conductive polysilicon plug in the contact hole, sequentially forming a titanium film and a titanium nitride film over the entire exposed surface of the resulting structure, selectively removing the titanium film and titanium nitride film by use of a first storage electrode mask, thereby forming a titanium film pattern and a titanium nitride film pattern, sequentially forming a ruthenium film and a ruthenium dioxide film over the entire exposed surface of the resulting structure, selectively removing the ruthenium film and the ruthenium dioxide film by use of a second storage electrode mask, thereby forming a ruthenium film pattern and a ruthenium dioxide film pattern, forming an SrO film over the entire exposed surface of the resulting structure, forming a high dielectric film over the SrO film, and forming an upper electrode over the high dielectric film.