The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 1999
Filed:
Nov. 21, 1996
John H Tregilgas, Richardson, TX (US);
Donald F Weirauch, Dallas, TX (US);
John A Dodge, Richardson, TX (US);
Sidney G Parker, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method is provided for producing an n-type or p-type epitaxial layer using a doped substrate material. The method includes growing a substrate (12), preferably from a material to which an epitaxial layer can be lattice-matched. The substrate (12) is doped with a predetermined concentration of dopant (14). Preferably, the dopant (14) possesses the ability to rapidly diffuse through a material. An epitaxial layer (16) is grown upon the doped substrate (12). The epitaxial layer (16) and the doped substrate are annealed, thereby causing the dopant (14) to diffuse from the substrate (14) into the epitaxial layer (16).