The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 1999
Filed:
Jun. 11, 1996
Applicant:
Inventors:
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03C / ; B44C / ; B05D / ;
U.S. Cl.
CPC ...
430296 ; 430323 ; 430324 ; 438700 ; 216 41 ; 216 51 ; 427552 ;
Abstract
A pattern forming method comprises subjecting a surface of a semiconductor substrate to a surface treatment for imparting hydrogen atoms, irradiating a desired region of said surface with an energy ray, selectively forming a metal film on a non-irradiated region other than the desired region, and etching said semiconductor substrate using said metal film as a mask.
Published as:
EP0581280A2; JPH0653188A; KR940006196A; TW238363B; EP0581280A3; KR0137124B1; US5861233A; EP0581280B1; ATE185430T1; DE69326651D1; DE69326651T2; JP3334911B2;