The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 19, 1999

Filed:

Aug. 26, 1997
Applicant:
Inventor:

Seung-Ho Lee, Seoul, KR;

Assignee:

SKM Limited, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148512 ; 148527 ; 148537 ; 427250 ; 427255 ;
Abstract

A method forms an indium antimonide layer by a sequential evaporation for use as a magnetic sensing material having high electron mobility. The method includes the steps of: (a) preparing a substrate; (b) pre-heating the substrate (c) depositing an antimony layer on top of the substrate; (d) forming an indium layer on top of the antimony layer to thereby obtain a sequentially deposited layer, wherein the sequentially deposited layer includes the antimony and the indium layers; (e) providing a protection layer on top of the sequentially deposited layer; and (f) heat treating the sequentially deposited layer to force inter-diffusion of antimony and indium, thereby producing the indium antimonide layer.


Find Patent Forward Citations

Lee, Seung-Ho. (1999). Method for forming an indium antimonide layer (U.S. Patent No. 5861069). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5861069

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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