The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 1999
Filed:
Apr. 24, 1997
Frank L Thiel, Austin, TX (US);
Marco Corsi, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A semiconductor transistor device includes a first doped region 34 of a first conductivity type; a second doped region 30 of the first conductivity type formed at the surface of the first doped region 34, the second doped region 30 has a higher doping concentration than the first doped region 34; a source region 24 of a second conductivity type formed at the surface of the second doped region 30; a lightly doped drain region 28 of the second conductivity type surrounding the first doped region 34, the lightly doped drain region 28 has a lower doping concentration than the source region 24, the lightly doped drain region 28 is spaced apart from the second doped region 30; a buried layer 40 of the second conductivity type below the first doped region 34 and coupled to the lightly doped drain region 28; and a gate 32 overlying and spaced apart from the first doped region 34 and the second doped region 30.