The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 1999
Filed:
Feb. 28, 1997
NEC Corporation, Tokyo, JP;
Abstract
In a method for forming a cylindrical capacitor lower plate in a semiconductor device, a first insulating film, a first conducting film and a second insulating film are formed on a principal surface of a semiconductor substrate in the named order. A patterned photoresist film is formed on the second insulating film, and the second insulating film is patterned by an anisotropic etching using the photoresist film as a mask. After the photoresist film is removed, the first conducting film is patterned by an etching using the patterned second insulating film as a mask. Thereafter, a second conducting film is deposited on a whole surface, and then, the second conducting film is anisotropically etched so that a remaining second conducting film is left on a side surface of the patterned first conducting film. The patterned second insulating film is removed, so that the remaining second conducting film is left in the form of a sidewall which is upright from a periphery of the patterned first conducting film.