The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 1999
Filed:
May. 17, 1996
Applicant:
Inventors:
Byung-Hoo Jung, Seoul, KR;
Yong-Suk Jin, Kyungki-do, KR;
Joo-Hyung Lee, Seoul, KR;
Chang-Won Hwang, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
438150 ; 438166 ; 438486 ;
Abstract
The present invention relates to a thin film transistor-liquid crystal display (hereinafter referred to as a TFT-LCD) and a manufacturing method thereof. An amorphous silicon is deposited on a substrate. The amorphous silicon is transformed into a poly silicon by method of solid phase crystallization, and the first poly silicon layer pattern is formed by etching. An amorphous silicon is deposited on the first poly silicon layer pattern. The amorphous silicon is transformed into a second poly silicon layer by method of solid phase crystallization.