The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 1999
Filed:
Jan. 15, 1997
Shigeru Tohyama, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
The method for fabricating a charge coupled device disclosed includes the steps of forming a gate oxide film and forming a transfer electrode. The provisional oxide film is formed on a semiconductor substrate, and the provisional oxide film at a transfer electrode formation region is selectively etched away. The transfer electrode from a polycrystalline silicon film on the gate oxide film of the transfer electrode formation region is selectively formed, and the provisional oxide film between transfer electrodes is etched away. Since the oxide film which protects the silicon substrate surface (oxide film/silicon interface) of the second layer transfer electrode formation region during the patterning of the first layer polycrystalline film and the insulating oxide film which covers the first layer transfer electrode surface, is formed in the two-step oxidation process, it is possible to adjust the thicknesses of the two oxide films as desired.