The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 1999
Filed:
Feb. 27, 1996
Lawrence S Pam, Pleasanton, CA (US);
Thomas E Felter, Livermore, CA (US);
Alec Talin, Livermore, CA (US);
Douglas Ohlberg, Mountain View, CA (US);
Ciaran Fox, Stanford, CA (US);
Sung Han, Pojoaque, NM (US);
Sandia Corporation, , US;
Abstract
This method produces a field emitter material having a uniform electron emitting surface and a low turn-on voltage. Field emitter materials having uniform electron emitting surfaces as large as 1 square meter and turn-on voltages as low as 16V/.mu.m can be produced from films of electron emitting materials such as polycrystalline diamond, diamond-like carbon, graphite and amorphous carbon by the method of the present invention. The process involves conditioning the surface of a field emitter material by applying an electric field to the surface, preferably by scanning the surface of the field emitter material with an electrode maintained at a fixed distance of at least 3 .mu.m above the surface of the field emitter material and at a voltage of at least 500V. In order to enhance the uniformity of electron emission the step of conditioning can be preceeded by ion implanting carbon, nitrogen, argon, oxygen or hydrogen into the surface layers of the field emitter material.