The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 1999
Filed:
Aug. 27, 1997
Cesare Ronsisvalle, Catania, IT;
Abstract
Semiconductor device chips having a first layer of semiconductor material, a second layer of a semiconductor material and an insulating layer disposed therebetween. The first layer of semiconductor material has doped semiconductor regions disposed therein, and the second layer of semiconductor material has a power device disposed therein. The power device is disposed beneath the doped semiconductor region of the first layer. Trenches may be located within the first layer of semiconductor material to electrically isolate different areas having doped semiconductor regions. The insulating layer is typically formed from an oxide.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile