The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 1999
Filed:
Nov. 25, 1996
Ryuichi Matsuo, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor integrated circuit device includes a first conductor formed on a main surface of a semiconductor substrate with an insulating film therebetween, and a second conductor formed with an insulating film therebetween so as to be placed near one side of the first conductor and to have its one end extended over a top surface of the one side of the first conductor. The semiconductor integrated circuit device further includes an impurity diffusion layer at the main surface of the semiconductor substrate under a region where first and second conductors are close to each other. In accordance with this structure, higher degree of integration of a memory cell can be readily achieved by a relatively simple manufacturing process. Such a structure can be manufactured by forming the impurity diffusion layer at the surface of the semiconductor substrate, forming first conductor by patterning a first conductor layer, forming a second conductor layer, and forming a second conductor by patterning the second conductor layer.