The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 1999
Filed:
Aug. 22, 1996
Applicant:
Inventor:
Chae Hyun Jung, Youngchon, KR;
Assignee:
Hyundai Electronics Industries Co., Ltd., Kyungki-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438199 ; 438225 ; 438297 ; 257274 ;
Abstract
The present invention relates to a method of fabricating a CMOS transistor which can further reduce the size of a chip since it is not necessary to consider the metal contact process margin since a gate electrode of a PMOS transistor and a gate electrode of an NMOS transistor are directly connected with a polysilicon wiring during a process of forming the gate electrodes, which can prevent the formation of a parasitic transistor by forming a cell space region in an active region below the polysilicon wiring.
Jung, Chae. (1999). Method of fabricating a cmos transistor (U.S. Patent No. 5856215). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5856215
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile