The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 1999
Filed:
Nov. 21, 1995
Barbara Gabbrielli, Milan, IT;
Osvaldo Crippa, Arcore, IT;
Alcatel Italia S.P.A., Milan, IT;
Abstract
The present invention concerns a contact photolithographic process for realizing submicrometer metal lines, in particular lines for devices such as FETs, MESFETs and ICs, with width different from the pattern width on the masks, through contact photolithographic techniques. In particular through this technique it is possible to realize metal lines having width smaller than 0.5 .mu.m. By varying the reversal photoresist exposure energy it is possible to control the dimension of the line to be realized. Using an exposure energy lower than the one normally used, lines having width smaller than the width of the corresponding tracks on the mask are obtained and vice versa, with an exposure energy higher than the one normally used, lines having width greater than the corresponding tracks on the mask are obtained.