The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 05, 1999

Filed:

Feb. 18, 1997
Applicant:
Inventor:

Zheng Yuan, Cupertino, CA (US);

Assignee:

Watkins-Johnson Company, Palo Alto, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
4272553 ; 4272552 ; 4272551 ; 4272555 ;
Abstract

A chemical vapor deposition apparatus and method for forming an oxide thin film on a surface of a substrate. The system includes a reaction chamber having a support for holding a substrate and an injector positioned to inject gaseous substances into the reaction chamber. The injector includes a central injection port coupled to a source of ozone and at least two outer injection ports positioned on opposite sides of the central injection port and coupled to a source of chemical reagent. Ozone and chemical reagent are separately injected into the reaction chamber through the central injection port and outer injection ports, respectively, with the ozone and chemical mixing in the area between the injector and the substrate.


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Yuan, Zheng. (1999). Optimization of sio.sub.2 film conformality in atmospheric pressure (U.S. Patent No. 5855957). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5855957

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