The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 1998
Filed:
Mar. 13, 1997
Kenneth Maxwell Hays, Anaheim, CA (US);
Bradley Leonard Halleck, Salem, OR (US);
Eugene Coleman Whitcomb, Mission Viejo, CA (US);
The Boeing Company, Seattle, WA (US);
Abstract
Micromachining a microelectromechanical structure requires one or more heavily doped silicon layers. Intricately patterned structures are created in a heavily doped surface layer on a relatively undoped substrate. The substrate is subsequently dissolved in a selective etch. The doping prevents the patterned structures from dissolving. In this invention, a doped layer is grown epitaxially onto the first substrate rather than by diffusing a dopant into the substrate. This produces additional planarity, thickness control, and dopant profile control. The structure may then be placed into a larger device, such as an infrared sensor, an accelerometer, or an angular rate sensor.