The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 1998

Filed:

Jun. 04, 1996
Applicant:
Inventors:

James Hsu, Saratoga, CA (US);

Jian Chen, San Jose, CA (US);

Yuan Tang, San Jose, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438257 ; 438263 ; 438264 ; 438306 ;
Abstract

A system and method for providing a very short channel memory cell having a double diffuse implant junction is disclosed. The system and method comprise the sequential steps of providing a junction implant, providing a spacer, and providing a double diffuse implant. Because the double diffuse implant is provided after the spacer, the double diffuse implant does not extend as far under the gate of a memory cell after processing. Thus, the memory cell has a graded junction that does not substantially shorten the effective length of the channel. The memory cell can, therefore, function even as the size of the memory cell is decreased. In addition, the thermal cycling of the double diffuse implant may be decoupled from that of the junction implant. This is achieved without complicating processing. Consequently, overall system performance is enhanced.


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