The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 1998
Filed:
Jan. 30, 1997
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A process for fabricating a nonvolatile semiconductor memory device has one transistor and one ferroelectric capacitor electrically connected to each other by a contact plug, which comprising forming a transistor; forming an inter-layer insulating film, at least an upper surface portion thereof being a titanium oxide film; forming a capacitor lower electrode; and forming a capacitor insulating film and a capacitor upper electrode, wherein the lower electrode forming step comprises: depositing a titanium nitride film and a platinum film on the titanium oxide film; etching the platinum film with a first etching gas adapted to suppress deposition of substances including platinum; and etching the titanium nitride film with a second etching gas having a high etching selectivity to the titanium oxide film.