The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 1998
Filed:
Feb. 20, 1997
Hoon Huh, Chungcheongbuk-do, KR;
LG Semicon Co., Ltd., Chungcheongbuk-go, KR;
Abstract
A diffusion confirming pattern for measuring a diffusion distance of an etch-resistant component during a transfer process of a semiconductor device, includes a first photoresist pattern formed on a substrate according to a first mask pattern, and a second photoresist pattern formed on the substrate according to a second mask pattern, wherein the first mask pattern is separated from the second mask pattern by a predetermined interval, the second photoresist pattern is separated from the first photoresist pattern by an interval, and the predetermined interval is compared with the interval between the first and second photoresist patterns to determine the diffusion distance of the etch-resistant component.