The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 1998

Filed:

Apr. 07, 1997
Applicant:
Inventors:

Aldo Donato, Rome, IT;

Carlo Alberto Nannetti, Leghorn, IT;

Alberto Ortona, Naples, IT;

Elisabetta Borsella, Grottaferrata, IT;

Sabina Botti, Rome, IT;

Sergio Casadio, Anguillara Sabazia, IT;

Gianni D'Alessandro, Bracciano, IT;

Antonio Alessandro Licciulli, Mesagne, IT;

Stefano Martelli, Rome, IT;

Amedeo Masci, Vetralla, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B / ;
U.S. Cl.
CPC ...
264625 ; 264640 ; 264641 ; 264642 ; 264643 ; 423345 ;
Abstract

Ceramic matrix composites (CMC) of high density, preferably of the type SiC/SiC, are provided by a production process based on the infiltration of ceramic fiber cloths with a polymeric precursor solution containing, as fillers, inert powders having size much lower than the mean distance among the ceramic fibers which are used as basic material for the manufacturing of CMC, typically a nanometric granulometry. Such step is followed by the steps of hardening the cloths, pyrolysis of the polymer and repeated thickenings until the desired density is reached. A possible alternative process comprises a brief (<24 hours) treatment of infiltration of SiC from the vapor phase (CVI) with precursors and typical operative parameters for the deposition of silicon carbide followed by the repeated thickenings.


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