Process for the production of electroluminescence element,

Abstract

A process for producing an electroluminescence element provided with a luminescent layer sandwiched between two electrodes on an insulating substrate, the luminescent layer being composed of a host material with a luminescent center element added. The process comprises a step of forming the aforesaid luminescent layer as a film onto the insulating substrate by either sputtering or evaporation, by use of a source material composed of a compound of an element of Group II and an element of Group VI, to which a halide of a rare earth element is added as the luminescent center element. The atmosphere at the time of the film formation contains either a halogen gas or halide gas. The aforesaid luminescent layer is formed as a film onto the insulating substrate by either sputtering or evaporation, by use of a source material composed of the aforesaid compound of an element of Group II and an element of Group VI, to which a fluoride or fluorine compound of the luminescent center element and a halide other than fluoride of the element of Group II are added. The film formation atmosphere may be pretreated with a chlorine-containing gas prior to a film formation step of forming the luminescent layer as a film onto the insulating substrate by a sputtering method by use of a source material composed of the host material with the luminescent center element. An electro-luminescence element is further disclosed, wherein the X-ray diffraction spectrum thereof has only a single peak at an X-ray diffraction angle from the luminescent layer, ranging from 25.degree. to 30.degree. according to a thin film X-ray diffraction measuring method using Cu-Kd radiation, and no other peaks of the X-ray diffraction spectrum exist at an X-ray diffraction angle of approximately 27.degree..