The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 1998
Filed:
Feb. 19, 1998
Kiyoshi Chikamatsu, Tokyo, JP;
Toshiro Watanabe, Tokyo, JP;
Toshiaki Inoue, Tokyo, JP;
Yasushi Kose, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor device includes: a plurality of first field effect transistors (FETs) having a gate formed on a main surface of a semiconductor substrate, and a drain and a source formed in regions on both sides of the gate; a plurality of second FETs having a gate formed on the main surface of the semiconductor substrate, and a drain and a source formed in regions on both sides of the gate; and an electrically conductive layer that penetrates the main surface and a back surface of the semiconductor substrate in a region between the pair of FETs; wherein the first and second FETs that form the pair of FETs are disposed close to each other so that their drains are opposite to each other; wherein region widths of the first and second FETs in a direction of shorter sides of sources thereof are substantially identical with region widths of the first and second FETs in a direction of shorter sides of drains thereof; wherein all the drains of the first and second FETs are electrically connected to each other; wherein all the gates of the first and second FETs are electrically connected to each other; and wherein all the sources of the first and second FETs are electrically connected to each other on the back surface of the semiconductor substrate through the conductive layer.