The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 1998
Filed:
Apr. 30, 1996
Applicant:
Inventors:
Riccardo Depetro, Domodossola, IT;
Claudio Contiero, Buccinasco, IT;
Antonio Andreini, Usmate Velate, IT;
Assignee:
SGS--Thomson Microelectronics S.r.l., Agrate Brianza, IT;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257343 ; 257409 ; 257492 ;
Abstract
N-channel LDMOS and p-channel MOS devices for high voltage integrated in a BiCMOS integrated circuit and exploiting a RESURF condition are provided with a buried region of the same type of conductivity of the epitaxial layer and a doping level intermediate between the doping level of the epitaxial layer and the doping level of a well region. The devices may be configured as source or drain followers without problems.
Quick Actions:
Depetro, Riccardo. (1998). Thin epitaxy resurf integrated circuit containing high voltage p-channel (U.S. Patent No. 5852314). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5852314
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile