The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 1998
Filed:
Jun. 05, 1997
Ki-ho Kwon, Kyungki-do, KR;
Dong-soo Jang, Kyungki-do, KR;
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Abstract
A non-volatile memory device includes a substrate having memory cell and peripheral circuit regions thereof. A non-volatile memory cell gate on a memory cell region of the substrate includes a floating gate on the substrate, a first insulating gate on the floating gate opposite the substrate, and a control gate on the first insulating layer opposite the floating gate. A resistor layer is provided on a peripheral circuit region of the substrate, and the second insulating layer is provided on the resistor layer opposite the substrate. In addition, a capping layer is provided on the second insulating layer opposite the resistor layer wherein a contact hole is defined by the second insulating layer and the capping layer thereby exposing a portion of the resistor layer. Related methods are also discussed.