The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 1998
Filed:
May. 03, 1996
Applicant:
Inventor:
Peter Ramm, Obermuehlenweg, DE;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438311 ; 438459 ; 438690 ; 438691 ; 438692 ; 438693 ; 438759 ; 438940 ; 438975 ; 438977 ;
Abstract
A method of fabricating vertically integrated microelectronic systems by CMOS-compatible standard semiconductor process technology, by independently processing individual component layers of at least two separate substrates, including the formation of via holes penetrating through all existing component layers and connecting together the front surfaces of the two substrates, thinning the reverse surface of one of the substrates down to the via holes, increasing the depth of the via holes to a metallization plane of the other substrate and forming electrically conductive connections between the two substrates through the via holes.