The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 1998
Filed:
Mar. 27, 1996
Applicant:
Inventors:
Roger F Caldwell, Milpitas, CA (US);
Jeffrey T Watt, Mountain View, CA (US);
Assignee:
Cypress Semiconductor Corporation, San Jose, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438295 ; 438587 ; 438412 ; 438700 ; 438947 ;
Abstract
A method for forming a gap in a silicon layer is described. A silicon layer is formed over a substrate. A nitride layer is formed over the silicon layer and an oxide layer is formed over the silicon layer, adjacent to the nitride layer. A portion of the oxide layer is then removed to form an exposed region of the silicon layer. Then an etchant is applied to the exposed region to form an gap of the silicon layer.
Caldwell, Roger. (1998). Deep sub-micron polysilicon gap formation (U.S. Patent No. 5851887). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5851887
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile