The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 1998
Filed:
Jun. 02, 1995
Applicant:
Inventors:
Naoki Makita, Nara, JP;
Takashi Funai, Tenri, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438166 ; 438486 ;
Abstract
The semiconductor device of the invention includes: a substrate having an insulating surface; an active region formed on the insulating surface of the substrate, the active region being formed by a crystalline silicon film; and an insulating thin film formed on the active region. In the semiconductor device, the active region contains a catalyst element for promoting a crystallization of an amorphous silicon film by a heat treatment.
Makita, Naoki. (1998). Semiconductor device and method for producing the same (U.S. Patent No. 5851860). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5851860
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile