The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 1998
Filed:
Mar. 13, 1996
Donald Mark Pooke, Lower Hutt, NZ;
Robert George Buckley, Northland, NZ;
Jeffery Lewis Tallon, York Bay, NZ;
Michael Staines, Days Bay, NZ;
Alexander Otto, Chelmsford, MA (US);
Industrial Research Limited, Lower Hutt, NZ;
American Superconductor Corporation, Westborough, MA (US);
Abstract
A method for forming a conductor element comprising a Tl or Hg-based high temperature superconductor (HTSC) material, comprises providing at least one first precursor material within an outer sheath for the conductor element; providing at least one second precursor material within the conductor sheath and separated from the first precursor material(s) by a barrier layer formed from a Noble metal for example between the first and second precursor materials; and heating the conductor sheath containing the precursors to a temperature at which the barrier layer melts to allow the precursor materials to mix and react, or to a temperature at which one of the precursor material(s) diffuses through the barrier layer sufficiently allow the precursor materials to mix and react, to form the Tl or Hg-HTSC material within the outer conductor sheath.