The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 1998
Filed:
Jul. 17, 1996
Sony Corporation, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device includes the steps of: patterning a first passivation film on a semiconductor substrate; patterning a ball limiting metal film; patterning a second passivation film; performing a heat-treatment for hardening the second passivation film and annealing the ball limiting metal film; patterning a bump forming metal film; and wet-back processing the bump forming metal film. In this method, the heat-treatment may be performed in an atmosphere having an oxygen concentration of 50 ppm or less at a temperature of from 300.degree. to 400.degree. C. for 10 to 30 minutes. Additionally, at least one of the first and second passivation films may be a polyimide film, and the ball limiting metal film may has a three layer structure of a Ti layer, a Cu layer and an Au layer laminated from the bottom in this order.