The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 1998

Filed:

May. 23, 1997
Applicant:
Inventors:

Robert John Wojnarowski, Ballston Lake, NY (US);

James Wilson Rose, Guilderland, NY (US);

Kyung Wook Paik, Clifton Park, NY (US);

Michael Gdula, Knox, NY (US);

Assignee:

General Electric Company, Schenectady, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438382 ; 438238 ; 438384 ; 148D / ;
Abstract

A method for fabricating a thin film resistor comprises applying a tantalum nitride layer over a dielectric layer, applying a metallization layer over the tantalum nitride layer, and patterning the metallization layer with a first portion of the metallization layer situated apart from a second portion of the metallization layer and both the first and second portions being at least partially situated on the tantalum nitride layer. In one embodiment, after patterning the metallization layer, the resistance value between the first and second portions of the metallization layer is determined and compared to a predetermined resistance value, and at least one of the first and second portions is trimmed to obtain a modified resistance value between the first and second portions that is closer to the predetermined resistance value than the determined resistance value.


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