The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 1998
Filed:
Oct. 13, 1995
Hoton How, Belmont, MA (US);
Ta-Ming Fang, West Newton, MA (US);
Massachusetts Technological Laboratory, Inc., Belmont, MA (US);
Abstract
A new technique is presented which exploits AC Hall effect in the characterization of layered semiconductor structures. The method involves the use of laser signals by means of optical fibers in the presence of a DC magnetic bias field. Upon incidence the polarization of the optical signal is rotated via a Lorentz force due to the AC Hall effect. As such, the reflected waves carry informations on the Hall mobility of the charge carriers. The calculations show that AC Hall reflection coefficient warrants sufficient intensity to be measured. Our theory is complete in the sense that depth profiling has been explicitly incorporated in the formulation.