The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 1998
Filed:
Aug. 08, 1996
Francis Ho, Palo Alto, CA (US);
David M Bloom, Portola Valley, CA (US);
The Board of Trustees of the Leland Stanford Junior University, Stanford, CA (US);
Abstract
An all-electrical high frequency contact sampling probe provides sub-micron spatial resolution and picosecond or sub-picosecond temporal resolution. In a preferred embodiment, the probe is a monolithic integration of a sampling circuit with a cantilever and probe tip, where the distance between the circuit and the tip is less than a wavelength of interest in an RF signal �V.sub.RF !. The sampling circuit �44! uses Schottky diodes �SD! for sampling the RF signal �V.sub.RF ! from a device under test at a rate determined by local oscillator signals �50, 52!. An IF signal �V.sub.IF ! produced by the sampling probe is an equivalent time representation of the RF signal. Applications include testing signals at interior nodes of high speed integrated circuits.