The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 1998
Filed:
May. 03, 1996
Kazunori Onozawa, Takasaki, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor integrated circuit device is provided which includes a memory cell M, in which a capacitance element C is added to the storage node portion of an inverter circuit composed of a drive MOSFET and a load TFT Qf. The device also includes and a bipolar transistor Tr provided as a peripheral element. A reference power supply line to be connected with the source region of the drive MOSFET Qd and an emitter electrode to be connected with the emitter region of the bipolar transistor Tr are formed of an uppermost thick polycrystal silicon film. Moreover, an intermediate thin polycrystal silicon film between the uppermost polycrystal silicon film and a first polycrystal silicon film (or polycide film) is covered in a memory cell forming region with the uppermost polycrystal silicon film. Still moreover, the uppermost polycrystal silicon film is partially silicified.