The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 1998
Filed:
Jan. 24, 1996
Ho-kyu Kang, Seoul, KR;
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Abstract
A capacitor structure of a DRAM device and a method thereof, including a first electrode formed in each unit memory cell to be connected to a source of a transistor, a deteriorating prevention film formed at the lowermost surface of the first electrode, exclusive of a portion where the first electrode is connected to the source of a transistor, an underlayer formed beneath the deterioration prevention film, an undercut formed between the underlayer and deterioration prevention film, a high-dielectric film formed on surfaces of the first electrode, underlayer and deterioration prevention film which is exposed by the undercut, a reaction/diffusion prevention film formed on the high-dielectric film, formed on the first electrode and underlayer, exclusive of an area around the undercut, and a second electrode formed on the entire surface of the high-dielectric film and reaction/diffusion prevention film, thereby preventing increase of leakage current amount caused by the undercut formed during the capacitor manufacturing process.